We specialize in the research, development, and production of high-performance laser chips, combining advanced semiconductor technology with precision manufacturing. Our chips deliver exceptional stability, efficiency, and reliability, supporting applications across industrial, scientific, medical, and communication fields.
Engineered for consistent performance even in demanding environments, our laser chips enable precision material processing, high-resolution sensing, optical communication, and medical diagnostics. Trusted by clients worldwide, they provide a reliable foundation for high-performance systems and innovative solutions.
Technology Advantages
High Precision:
Achieves stable and accurate output for applications requiring micron- to millimeter-level accuracy.
- Advanced Manufacturing:
Cutting-edge semiconductor fabrication ensures high yield and consistent quality. Customizable Specifications:
Wavelength, output power, and beam quality can be tailored to meet specific requirements.
- Reliable Performance:
Designed for long-term operation under harsh environmental conditions. - Integrated Testing:
Comprehensive inspection from wafer to packaged chip guarantees consistent performance. - Scalable Production:
Supports both small-scale prototypes and large-volume manufacturing.
Key Service Advantages
- Tailored Solutions:
Customized laser chips and modules to meet specific application needs. - End-to-End Support:
From prototype development to mass production and after-sales service. - System Integration Assistance:
Guidance for seamless integration of laser chips into devices and systems. - Global Reach:
Serving clients worldwide with responsive technical and customer support. - Innovation Partnership:
Collaborative R&D to develop cutting-edge laser technologies. - Fast Delivery & Scalability:
Flexible production capacity to meet both small and large orders efficiently.
- Ultra-Narrow Linewidth & High SMSR：The 1.9 μm mid-infrared laser features a 3 dB bandwidth of just 0.11 nm with an SMSR of up to 47 dB. The 850 nm tunable laser offers an ultra-narrow linewidth of < 0.03 nm and an SMSR exceeding 50 dB, ensuring high spectral purity and stability.
- Wide Tunable Range：The 1.9 μm laser supports continuous wavelength tuning over 80 nm (1880–1960 nm), enabling one device to cover multiple application scenarios.
- High Output Power：Output power reaches up to 36.8 mW for the 1.9 μm laser and up to 50 mW for the 850 nm tunable laser, meeting the needs of high-end sensing and communication applications.
- Low Power Consumption：Designed with low operating current to reduce system power consumption and extend operational endurance.
- Excellent Beam Quality：A small far-field divergence angle improves ranging accuracy and signal reception efficiency.
- High Reliability：Long-lifetime design validated by accelerated aging tests, ensuring stable operation in harsh outdoor environments.
- Wide Power Range：Available in a series ranging from 25 W to 75 W, suitable for different detection distances and sensing requirements.
Explore real-world applications of our chip solutions across industries, delivering reliable performance, efficiency, and innovation.
Basic Information
- Package Type: COS (Chip-on-Submount) Package
Key Features
- High thermal conductivity Aluminum Nitride (AlN) ceramic heatsink packaging for superior heat dissipation
- Provides electrical isolation between the laser chip and heat dissipation device
- Ensures more stable performance after packaging
- Gold-plated surface design for improved durability and appearance
- Single-emitter continuous output power up to 1W
Applications
Widely used in laser medical devices, laser pumping systems, plastic material processing, LiDAR, and gas detection applications.
Laser Diode Chip
High Power | High Reliability | Precise Performance
High Precision
Tight tolerancefor consistent performance
High Efficiency
Optimized slopeefficiency formaximum output
High Reliability
Stable operation across wide temperature range
Advanced Design
Engineered for high power and long lifetime
| Parameter | Unit | Value |
|---|---|---|
| Emission Window Width | μm | 120 |
| Period | μm | 500 |
| Cavity Length | μm | 1000 |
| Thickness | μm | 125–130 |
| Output Power | W | 100 |
| Lasing Wavelength | nm | 1920–1960 |
| Spectral Width (FWHM) | nm | 30 |
| Thermal Drift Coefficient | nm/°C | 0.30 |
| Fast Axis Divergence | ° | 60 |
| Slow Axis Divergence | ° | 15 |
| Slope Efficiency | W/A | 0.26 |
| Threshold Current | A | 0.2 |
| Operating Current | A | 4 |
| Operating Voltage | V | 1.48–1.50 |
| Operating Temp | °C | 10–50 |
| Storage Temp | °C | 10–60 |
At Shenzhen Optical Core Matrix Technology Co., Ltd. , We provide comprehensive OEM services for laser chips, supporting clients from product concept to mass production. Our solutions are designed to meet the unique requirements of your devices and systems, ensuring seamless integration, high performance, and reliability.
We specialize in the development and application of advanced optoelectronic technologies, integrating semiconductor laser chips, sensing systems, and intelligent imaging solutions. Our core capabilities support a wide range of industries including industrial automation, intelligent sensing, aerospace technology, and scientific research.
